![]() However, it is well known that the maximum solid solubility of Mn at thermal equilibrium is limited to about 5×10 16 cm −3, which equals to the concentration of 10 −4% even around 1300☌. In the case of interstitial impurities, one impurity in a diamond-type cubic unit cell means the impurity concentration of 1 9 =11.1%. This paper is devoted in showing the results of growth and characterization of the super-doped Si : Mn.Įxtremely heavy doping beyond the concentration of 1% of magnetic elements, Mn, would be necessary in order to realize Mn–Mn or Mn–Si–Mn interactions in Si-based DMS. Si-based DMS would also be quite promising in the sense that spin-photonics devices can be integrated with existing Si large-scale-integrated-circuits (LSIs). On the other hand, Si-based DMSs have not been developed yet. Recently, III–V-compounds based DMSs such as (In,Mn)As, and (Ga,Mn)As were synthesized. These effects make it quite promising to develop spin-photonics and spin-electronic devices. Moreover, the spin-polarized carriers can be extracted and injected to the non-magnetic semiconducting layer. ![]() Hence, carrier injection by doping (static) or light irradiation (dynamic) can control the Curie temperature of DMSs. The Curie temperature depends on the location of Fermi level which is usually located within d-electron bands in the energy gap of DMSs. The ferromagnetic state seems to be explained by the concept of the so-called double exchange mechanism, which is a cooperative effect of the internal exchange of d electrons of Mn ions and charge transfer between Mn ions mediated by the itinerant carriers with s- and p-characters. The electronic current due to spin-polarized carriers formed by the sp–d interaction can be controlled by external parameters such as the magnetic field, temperature, light irradiation, etc. DMSs show, under appropriate conditions, a ferromagnetic order of local magnetic moments of doped 3d-transition-metal elements mediated by the sp–d exchange with carriers of the host semiconductors. Recently developed diluted magnetic semiconductors (DMSs), based on III–V compound semiconductors, heavily doped with 3d-transition-metal elements provide a new family of complex systems.
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